Arsenic dopant mapping in state-of-the-art semiconductor devices using electron energy-loss spectroscopy

Micron

Volumn 41, Issue 2, 2010, Pages 118-122

  Servanton, Germain ^a   Pantel, Roland ^a  

^a STMICROELECTRONICS   (France)

Author keywords

Arsenic dopant mapping; BiCMOS; CMOS; Silicon semiconductors; STEM EELS

Indexed keywords

BI-CMOS; CMOS; DIRECT DETECTION; DOPANT DISTRIBUTION; ELECTRICAL PERFORMANCE; HIGH DENSITY; NANO-DEVICES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SECONDARY IONS; SEMICONDUCTOR SILICON; SPATIAL RESOLUTION; STATIC RANDOM ACCESS MEMORY; STEM-EELS; TWO DIMENSIONAL DISTRIBUTION;

ARSENIC; DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPES; ELECTRON SCATTERING; MAPPING; RANDOM ACCESS STORAGE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 70649087880     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2009.10.004     Document Type: Article

References (17)

1. Avenier G., et al. 0.13 μm SiGe BiCMOS technology for mm-wave applications. BCTM Proc. (2008) 89-92
2. Castell M.R., Muller D.A., and Voyles P.M. Dopant mapping for the nanotechnology age. Nat. Mater. 2 (2003) 129
3. Cooper D., et al. Quantitative dopant profiling of laser annealed FIB-prepared silicon n-p junctions with nm-scale resolution. Appl. Phys. Lett. 91 (2007) 143501
4. Eybens P., Vandervorst W., Alvarez D., Xu M., and Fouchier M. In: Kalinin S., and Gruverman A. (Eds). Scanning Probe Microscopy (2007), Springer 31-87
5. Freitag B., et al. First performance measurements and application results of a new high brightness Schottky field emitter for HR-S/TEM at 80-300 kV acceleration voltage. Microsc. Microanal. (2008)
6. Imbert B., et al. Nickel silicide encroachment formation and characterization. Microelectron. Eng. (2009) (online in June 2009)
7. International Technology Roadmap for Semiconductors, 2009. See http://public.itrs.net for details.
8. Kölling S., and Vandervorst W. Failure mechanisms of silicon-based atom-probe tips. Ultramicroscopy 109 (2009)
9. Krivanek O.L., et al. An electron microscope for the aberration-corrected era. Ultramicroscopy 108 (2008)
10. Pantel R., Clement L., Rubaldo L., Borot G., and Dutartre D. Analytical STEM comparative study of the incorporation of covalent (Ge) or heterovalent (As) atoms in silicon crystal. Microscopy of Semiconducting Materials vol. 120 (2008), Springer
11. Servanton G., Pantel R., Juhel M., and Bertin F. Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS-EDX spectroscopy. Micron 40 (2009) 543
12. Servanton, G., Pantel, R., Juhel, M., Bertin, F., Submitted for publication. STEM EDX applications for arsenic dopant mapping in nanometer-scale silicon devices. Proceedings of the 16th Conference Microscopy of Semiconducting Materials, March 2009.
13. Thompson K., Booske J.H., Larson D.J., and Kelly T.F. Three-dimensional atom mapping of dopants in Si nanostructures. Appl. Phys. Lett. 87 (2005) 052108
14. Thompson K., Flaitz P.L., Ronsheim P., Larson D.J., and Kelly T.F. Imaging of arsenic cottrell atmospheres around silicon defects by three-dimensional atom probe tomography. Science 317 (2007) 1370
15. Topuria T., James E.M., and Browning N.D. Direct atomic scale characterization of interfaces and doping layers in field-effect transistors. Appl. Phys. Lett. 79 (2001) 132
16. Twitchett A.C., Dunin-Borkowski R.E., Hallifax R.J., Broom R.F., and Midgley P.A. Off-axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices. J. Microsc. 214 (2003)
17. Voyles P.M., Muller D.A., Grazul J., Citrin P.H., and Gossmann H.-J.L. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si. Nature 416 826 (2002)