Direct atomic scale characterization of interfaces and doping layers in field-effect transistors

Applied Physics Letters

Volumn 79, Issue 1, 2001, Pages 132-134

  Topuria, T ^a   James, E M ^a   Browning, N D ^a   Ma, Z ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035796880     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380401     Document Type: Article

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