Abnormal current-voltage characteristics and metal-insulator transition of amorphous carbon film/silicon heterojunction

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 371, Issue 4, 2007, Pages 318-321

  Gao, Xili ^a   Xue, Qingzhong ^a   Hao, Lanzhong ^a   Li, Qun ^a   Zheng, Qingbin ^a   Yan, Keyou ^a  

^a CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

Electrical properties; Junction; Metal insulator transition

Indexed keywords

AMORPHOUS CARBON; BIAS VOLTAGE; CARBON FILMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; TEMPERATURE DISTRIBUTION;

CONDUCTION MECHANISM; CURRENT VOLTAGE CURVE; DIRECT CURRENT MAGNETRON SPUTTERING; JUNCTION; RECTIFYING PROPERTIES; REVERSE BIAS VOLTAGE; SPACE CHARGE LIMITED CURRENTS; TEMPERATURE DEPENDENCE;

METAL INSULATOR TRANSITION;

EID: 35748935065     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.06.022     Document Type: Article

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