Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy

Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

  Zschech, Ehrenfried ^a   Huebner, Rene ^a   Chumakov, Dmytro ^b   Aubel, Oliver ^b   Friedrich, Daniel ^c   Guttmann, Peter ^d   Heim, Stefan ^d   Schneider, Gerd ^d  

^a FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

^b GLOBALFOUNDRIES   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC TRANSPORT; CATASTROPHIC FAILURES; COPPER INTERCONNECTS; CU ATOMS; CU INTERCONNECT; CU LINES; CU THIN FILM; CU-INTERCONNECTS; DAMAGE MECHANISM; DARK-FIELD; DRIVING FORCES; DYNAMIC STUDIES; GRAIN ORIENTATION; GRAIN SIZE; INTERFACE BONDING; LARGE DIMENSIONS; LOW STRESS; METAL MICROSTRUCTURE; NANO-SIZED; ON CHIPS; STRESS DISTRIBUTION; STRESS GRADIENT; STRESS MIGRATION TESTS; STRESS-INDUCED; STRESS-INDUCED VOIDING; STRESS-INDUCED VOIDS; VOID EVOLUTION; VOID GROWTH RATE; WAFER SURFACE; X RAY MICROSCOPY;

AGGLOMERATION; FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; INTEGRATED CIRCUITS; INTERCONNECTION NETWORKS; MICROSTRUCTURE; OPTICAL INTERCONNECTS; STRESS CONCENTRATION; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X RAY MICROSCOPES;

COPPER;

EID: 70450228376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3254166     Document Type: Article

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