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Volumn 96, Issue 6, 2009, Pages 603-611

Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications

Author keywords

Drain induced barrier lowering; Dual material gate; Mixed signal applications; Output resistance; Short channel effects; Transconductance

Indexed keywords

DRAIN INDUCED BARRIER LOWERING; DUAL MATERIAL GATE; MIXED SIGNAL APPLICATIONS; OUTPUT RESISTANCE; SHORT CHANNEL EFFECTS;

EID: 70449604854     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/00207210902738083     Document Type: Article
Times cited : (6)

References (8)
  • 1
    • 40949136578 scopus 로고    scopus 로고
    • Subthreshold Performance of Dual- Material Gate CMOS Devices and Circuits for Ultra Low Power Analog/Mixed Signal Applications
    • Chakraborty, S., Mallik, A., and Sarkar, C.K. (2008), 'Subthreshold Performance of Dual- Material Gate CMOS Devices and Circuits for Ultra Low Power Analog/Mixed Signal Applications,' IEEE Transactions on Electron Devices, 55, 827-832.
    • (2008) IEEE Transactions on Electron Devices , vol.55 , pp. 827-832
    • Chakraborty, S.1    Mallik, A.2    Sarkar, C.K.3
  • 2
    • 4444274252 scopus 로고    scopus 로고
    • Investigation of Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET
    • Chaudhry, A., and Kumar, A.J. (2004), 'Investigation of Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET,' IEEE Transactions on Electron Devices, 51, 1463-1467.
    • (2004) IEEE Transactions on Electron Devices , vol.51 , pp. 1463-1467
    • Chaudhry, A.1    Kumar, A.J.2
  • 4
    • 1942423745 scopus 로고    scopus 로고
    • Two-Dimensional Analytical Modeling of Fully Depleted Dual-Material Gate SOI MOSFET and Evidence for Diminished Short-Channel Effects
    • Kumar, M.J., and Chaudhry, A. (2004), 'Two-Dimensional Analytical Modeling of Fully Depleted Dual-Material Gate SOI MOSFET and Evidence for Diminished Short-Channel Effects,' IEEE Transactions on Electron Devices, 15, 569-574.
    • (2004) IEEE Transactions on Electron Devices , vol.15 , pp. 569-574
    • Kumar, M.J.1    Chaudhry, A.2
  • 6
    • 0035446941 scopus 로고    scopus 로고
    • Dual Work Function Metal Gate CMOS Technology Using Metal Inter-Diffusion
    • Polihchuk, I., Ranade, P., King, T.J., and Hu, C. (2001), 'Dual Work Function Metal Gate CMOS Technology Using Metal Inter-Diffusion,' IEEE Electron Device Letter, 22, 444-446.
    • (2001) IEEE Electron Device Letter , vol.22 , pp. 444-446
    • Polihchuk, I.1    Ranade, P.2    King, T.J.3    Hu, C.4
  • 7
    • 0036867746 scopus 로고    scopus 로고
    • Physics-Based Analytical Modeling of Potential and Electric Field Distribution in Dual-Material Gate MOSFET for Improved Hot Electron Effect and Carrier Transport Efficiency
    • Saxena, M., Haldar, S., Gupta, M., and Gupta, R.S. (2002), 'Physics-Based Analytical Modeling of Potential and Electric Field Distribution in Dual-Material Gate MOSFET for Improved Hot Electron Effect and Carrier Transport Efficiency,' IEEE Transactionsc on Electron Devices, 49, 1928-1938.
    • (2002) IEEE Transactionsc on Electron Devices , vol.49 , pp. 1928-1938
    • Saxena, M.1    Haldar, S.2    Gupta, M.3    Gupta, R.S.4
  • 8
    • 0033888854 scopus 로고    scopus 로고
    • Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors with Gate-Material Engineering
    • Zhou, X. (2000), 'Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors with Gate-Material Engineering,' IEEE Transactions on Electron Devices, 47, 113-120.
    • (2000) IEEE Transactions on Electron Devices , vol.47 , pp. 113-120
    • Zhou, X.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.