Interface trap model for the low-dose-rate effect in bipolar devices

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 2007, Pages

  Pershenkov, V S ^a   Chumakov, K A ^a   Nikiforov, A Y ^b   Chumakov, A I ^b   Ulimov, V N ^c   Romanenko, A A ^c  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b Specialized Electronic Systems   (Russian Federation)

^c RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR DEVICE; GAIN DEGRADATIONS; INTERFACE TRAPS; LOW DOSE RATE; RADIATION-INDUCED INTERFACE TRAPS;

BIPOLAR TRANSISTORS;

RADIATION EFFECTS;

EID: 70449592016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2007.5205487     Document Type: Conference Paper

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