Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation

Ultramicroscopy

Volumn 107, Issue 9, 2007, Pages 767-772

  Gilbert, M ^a   Vurpillot, F ^a   Vella, A ^a   Bernas, H ^b   Deconihout, B ^a  

^a UNIVERSITÉ JEAN MONNET   (France)

^b 91405 Orsay Campus   (France)

Author keywords

Atom probe; Semiconductors; Silicide

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; SILICIDES; SPECIMEN PREPARATION; THERMAL EVAPORATION; ULTRASHORT PULSES;

ATOM PROBES; FEMTOSECOND PULSED LASER FIELD EVAPORATION; MASS RESOLUTIONS; OPTICAL FIELD EVAPORATION;

SEMICONDUCTING SILICON;

SILICON;

ARTICLE; ATOM; ELECTRIC FIELD; ELECTRIC POTENTIAL; EVAPORATION; LASER; MATERIALS; REPRODUCIBILITY; SEMICONDUCTOR; TOMOGRAPHY;

EID: 34249051372     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2007.02.027     Document Type: Article

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