Statistical analysis of the influence of thinning processes on the strength of silicon

Materials Research Society Symposium Proceedings

Volumn 1112, Issue , 2009, Pages 171-177

  Yang, Yu ^a,b   Teixeira, Ricardo Cotrin ^a   Roussel, Philippe ^a   Swinnen, Bart ^a   Verlinden, Bert ^b   De Wolf, Ingrid ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

4-POINT BENDING; ENABLING TECHNIQUES; FINE GRINDING; FRACTURE ANALYSIS; FRACTURE STRESS; GRINDING LINES; LARGE DEFECTS; MECHANICAL INTEGRITY; STATISTICAL ANALYSIS; THINNING PROCESS; WEIBULL PLOTS; WEIBULL STATISTICS;

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; GRINDING (COMMINUTION); GRINDING (MACHINING); NANOTECHNOLOGY; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; THREE DIMENSIONAL; WEIBULL DISTRIBUTION;

FRACTURE;

EID: 70449567547     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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