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Volumn , Issue , 2007, Pages

Impact of hydrogen contamination on the total dose response of linear bipolar microcircuits

Author keywords

Enhanced low dose rate sensitivity; Hydrogen; Linear regulator; Passivation; Radiation effects; Temperature transducer; Total ionizing dose

Indexed keywords

ANALOG DEVICES; BIPOLAR LINEAR CIRCUITS; CAUSAL RELATIONSHIPS; ENHANCED LOW-DOSE RATE SENSITIVITY; HYDROGEN CONTENTS; INTERSIL; LINEAR BIPOLAR; LINEAR REGULATOR; LINEAR VOLTAGE REGULATORS; METALLIZATIONS; SILICON NITRIDE PASSIVATION; TEMPERATURE TRANSDUCER; TEMPERATURE TRANSDUCERS; TOTAL DOSE RESPONSE; TOTAL IONIZING DOSE;

EID: 70449565325     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2007.5205490     Document Type: Conference Paper
Times cited : (11)

References (12)
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    • 70449599998 scopus 로고    scopus 로고
    • R. L. Pease, D. Platteter, G. Dunham, J. E. Seiler and S. McClure, Total dose and dose rate response of an AD590 temperature transducer, presented at the 2006 RADECS workshop and submitted for publication in IEEE Trans. Nucl. Sci.
    • R. L. Pease, D. Platteter, G. Dunham, J. E. Seiler and S. McClure, "Total dose and dose rate response of an AD590 temperature transducer," presented at the 2006 RADECS workshop and submitted for publication in IEEE Trans. Nucl. Sci.
  • 4
    • 37248999401 scopus 로고    scopus 로고
    • R. L. Pease, D. G. Platteter, G. W. Dunham, J. E. Seiler, P. C. Adell, H. J. Barnaby and J. Chen, The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits, accepted for publication in the Dec. 2007 issue of IEEE Trans. Nucl. Sci.
    • R. L. Pease, D. G. Platteter, G. W. Dunham, J. E. Seiler, P. C. Adell, H. J. Barnaby and J. Chen, "The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits", accepted for publication in the Dec. 2007 issue of IEEE Trans. Nucl. Sci.
  • 5
  • 8
    • 0024873168 scopus 로고
    • CMOS Double Metal Circuits Due to Carbon Based SOGs
    • D. Pramanik, S. Nariani, G. Spadini, "CMOS Double Metal Circuits Due to Carbon Based SOGs," VMIC conference (1989) 454
    • (1989) VMIC conference , pp. 454
    • Pramanik, D.1    Nariani, S.2    Spadini, G.3
  • 9
    • 0026909544 scopus 로고
    • Intermetal Dielectric-Induced N-Field Device Failure in Double-Level Metal CMOS Process, (TSMC)
    • H. Kuo, K. lin, C. Liu, R. Tsai, M. Lin and C. Yoo, "Intermetal Dielectric-Induced N-Field Device Failure in Double-Level Metal CMOS Process," (TSMC) IEEE electron device letters 13 (1992) 405
    • (1992) IEEE electron device letters , vol.13 , pp. 405
    • Kuo, H.1    lin, K.2    Liu, C.3    Tsai, R.4    Lin, M.5    Yoo, C.6
  • 12
    • 11044231582 scopus 로고    scopus 로고
    • Pease, R.L., D.G. Platteter, G. W. Dunham, J. E. Seiler, H. 1. Barnaby, R.D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, and R. N. Nowlin, Characterization of Enhanced Low Dose Rate Sensitivity (ELDRS) Effects Using Gated Lateral PNP Transistor Structures, IEEE Trans. Nucl. Sci. NS51, No.6, 3773-3780, December 2004.
    • Pease, R.L., D.G. Platteter, G. W. Dunham, J. E. Seiler, H. 1. Barnaby, R.D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, and R. N. Nowlin, "Characterization of Enhanced Low Dose Rate Sensitivity (ELDRS) Effects Using Gated Lateral PNP Transistor Structures", IEEE Trans. Nucl. Sci. NS51, No.6, 3773-3780, December 2004.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.