Continuing evaluation of bipolar linear devices for total dose dependency and ELDRS effects

IEEE Radiation Effects Data Workshop

Volumn 2003-January, Issue , 2003, Pages 1-5

  McClure, S S ^a   Gorelick, J L ^b   Yui, C C ^c   Rax, B G ^c   Wiedeman, M D ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b BOEING COMPANY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSE RATE; LINEAR DEVICES; LINEAR MICROCIRCUIT; TOTAL DOSE;

RADIATION EFFECTS;

EID: 84952766207     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2003.1281310     Document Type: Conference Paper

References (11)

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3. E.W. Enlow et al, "Response of advanced bipolar process to ionizing radiation," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1342-1351, Dec. 1991.
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8. C. Yui et al, "Total dose bias dependency and ELDRS effects in bipolar linear devices," 2002 IEEE Radiation Effects Data Workshop Record, pp. 131-137, 2002.
9. A.H. Johnston et al, "Enhanced damage in bipolar devices at low dose rates: effects at very low dose rate," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 3049-3059, Dec. 1996.
10. M. Simons, et al., "Common-source TLD and RADFET characteristics of Co60, Cs137, and x-ray irradiation sources," 1997 IEEE Radiation Effects Data Workshop Record, pp. 28-34, 1997.
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