Process-variation- and random-dopant-induced static noise margin fluctuation in nanoscale CMOS and FinFET SRAM cells

2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009

Volumn , Issue , 2009, Pages 24-27

  Li, Tien Yeh ^a   Hwang, Chih Hong ^a   Li, Yiming ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED DEVICES; ELECTROSTATIC INTEGRITY; FIELD-EFFECT; GATE LENGTH; MOS-FET; MOSFETS; NANO SCALE; NANOSCALE CMOS; PLANAR METAL; PROCESS-VARIATION; RANDOM DOPANT FLUCTUATION; ROLL-OFF CHARACTERISTICS; SILICON ON INSULATOR; SRAM CELL; STATIC NOISE MARGIN; STATIC RANDOM ACCESS MEMORY;

CIRCUIT SIMULATION; COUPLED CIRCUITS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

STATIC RANDOM ACCESS STORAGE;

EID: 70449511344     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASQED.2009.5206305     Document Type: Conference Paper

References (10)

1. K. Takeuchi, R. Koh, T. Mogami, "A study of the threshold voltage variation for ultra-small bulk and SOI CMOS" , IEEE Trans. Electron Dev., 48, 2001, pp. 1995-2001.
2. Bhavnagarwala, X. Tang, J.D. Meindl, "The impact of intrinsic device fluctuations on CMOS SRAM cell stability" , IEEE J. Solid State Circuits, 36, 2001, 658-665.
3. E. Seevinck, F.J. List, J. Lohstroh, "Static-noise margin analysis of MOS SRAM cell" , IEEE J. Solid State Circuits, 22, 1987, pp. 748-754.
4. Y. Li. C.-H. Hwang, "High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants " , IEEE Trans. Microwave Theory Tech., 56, 2008, pp. 2726-2733.
5. Y. Li, S.-M. Yu, J.-R. Hwang and F.-L. Yang, "Discrete Dopant Fluctuated 20nm/15nm-Gate Planar CMOS", IEEE Trans. Electron Device, 55, 2008, pp. 1449-1455.
6. T. Ohtou, N. Sugii, T. Hiramoto, "Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX" , IEEE Electron Dev. Let., 28, 2007, pp. 740-742.
7. Asenov, "Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D 'atomistic' simulation study", IEEE Trans. Electron Devices, 45, 1998, pp. 2505-2513.
8. S. Odanaka, "Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures", IEEE Trans. CAD Integr. Circuit and System, 23, 2004, pp. 837-842.
9. T.-W. Tang, X. Wang, and Y. Li, "Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions", J. Comp. Elect., 1, 2002, pp. 389-393.
10. http://www.itrs.net/