Characterization of N-doped TiO2 films prepared by reactive sputtering using air/Ar mixtures

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1369-1372

  Chan, Mu Hsuan ^a   Lu, Fu Hsing ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Air; Band gap; Reactive sputtering; TiO2 xNx

Indexed keywords

ABSORPTION EDGES; ANATASE PHASE; ANATASE TIO; BAND GAP; BASE PRESSURE; FLOW RATIOS; LOW VACUUM; MIXED PHASE; MIXED PHASIS; N-DOPED TIO; NITROGEN-DOPED; PROCESSING TIME; REACTIVE GAS; RED SHIFT; SUBSTITUTIONAL NITROGEN; TIO; TIO2 - XNX; VISIBLE LIGHT; VISIBLE-LIGHT PHOTOCATALYSTS;

ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); ENERGY GAP; FILM PREPARATION; GAS ABSORPTION; NITROGEN; PHOTOCATALYSIS; REACTIVE SPUTTERING; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70449499637     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.062     Document Type: Article

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