메뉴 건너뛰기




Volumn 45, Issue 23, 2009, Pages 1196-1197

AlN on silicon based surface acoustic wave resonators operating at 5GHz

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; BANDSTOP FREQUENCIES; CHARACTERISATION; DIRECT WRITING; E-BEAM LITHOGRAPHY; ELECTROMECHANICAL COUPLING COEFFICIENTS; GIGAHERTZ FREQUENCIES; HIGH RESISTIVITY; INTERDIGITAL TRANSDUCER; ON WAFER MICROWAVE MEASUREMENTS; ORIENTED SILICON; SILICON-BASED; SURFACE ACOUSTIC WAVE RESONATORS;

EID: 70449369266     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2520     Document Type: Article
Times cited : (39)

References (6)
  • 1
    • 0344549824 scopus 로고    scopus 로고
    • Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system
    • 10.1049/el:20031088 0013-5194
    • Chen, S.W., Lin, H.F., Sung, T.T., Wu, J.D., Kao, H.L., and Chen, J.S.: ' Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system ', Electron. Lett., 2003, 39, (23), p. 1691-1693 10.1049/el:20031088 0013-5194
    • (2003) Electron. Lett. , vol.39 , Issue.23 , pp. 1691-1693
    • Chen, S.W.1    Lin, H.F.2    Sung, T.T.3    Wu, J.D.4    Kao, H.L.5    Chen, J.S.6
  • 3
    • 33744806057 scopus 로고    scopus 로고
    • 5 GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography
    • DOI 10.1063/1.2208372
    • Kirsch, P., Assouar, M.B., Elmazria, O., Mortet, V., and Alnot, P.: ' 5GHz surface acoustic wave devices based on aluminium nitride/diamond layered structure realised using electron beam lithography ', Appl. Phys. Lett., 2006, 88, p. 223504 10.1063/1.2208372 0003-6951 (Pubitemid 43839260)
    • (2006) Applied Physics Letters , vol.88 , Issue.22 , pp. 223504
    • Kirsch, P.1    Assouar, M.B.2    Elmazria, O.3    Mortet, V.4    Alnot, P.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.