Characterization of SILC and its end-of-life reliability assessment on 45nm high-K and metal-gate technology

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 499-504

  Pae, S ^a   Ghani, T ^b   Hattendorf, M ^b   Hicks, J ^a   Jopling, J ^a   Maiz, J ^a   Mistry, K ^b   O'Donnell, J ^a   Prasad, C ^a   Wiedemer, J ^b   Xu, J ^a  

^a INTEL CORPORATION   (United States)

^b Portland Technology Development   (United States)

Author keywords

High K dielectric; Metal gate; NMOS PBTI; Reliability; SILC; TDDB; Transistor

Indexed keywords

HIGH-K DIELECTRIC; METAL GATE; NMOS PBTI; SILC; TDDB;

ELECTRONIC EQUIPMENT; METALS; OPTIMIZATION; RELIABILITY ANALYSIS;

TRANSISTORS;

EID: 70449107015     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173303     Document Type: Conference Paper

References (10)

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