Investigation of stress-induced voiding inside and under vias in copper interconnects with "wing" pattern

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 683-684

  Matsuyama, H ^a   Suzuki, T ^a   Ehara, H ^a   Yanai, K ^a   Kouno, T ^a   Otsuka, S ^a   Misawa, N ^a   Nakamura, T ^a   Mizushima, Y ^a   Shiozu, M ^b   Miyajima, M ^a   Shono, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Fujitsu Semiconductor Technology Inc   (Japan)

Author keywords

Copper; Extrusion pattern; Stress induced voiding; Stress migration; Voiding inside VIA

Indexed keywords

OPTICAL INTERCONNECTS;

COPPER; EXTRUSION PATTERN; STRESS INDUCED VOIDING; STRESS MIGRATION; VOIDING INSIDE VIA;

SEMICONDUCTOR DOPING;

EID: 51549083252     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558987     Document Type: Conference Paper

References (3)

1. H.Matsuyama et al., "New Degradation Phenomena of Stress-Induced Voiding inside VIA in Copper Interconnects" in Proceedings of the Conference. IRPS 2007. P638-639
2. E. T. Ogawa et al., "Stress-Induced Voiding Under Vias Connected To Wide Cu Metal Leads" in Proceedings of the Conference. IRPS 2002. P312-321
3. T. Suzuki et al., "Stress migration phenomenon in narrow copper interconnects" J. Appl. Phys. 101 (2007) 044513.