Study of intra-nitride charge transport of SONOS-type devices using gate-sensing and channel-sensing transient analysis method

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 52-53

  Du, Pei Ying ^a,b   Lue, Hang Ting ^a   Wang, Szu Yu ^a   Lai, Erh Kun ^a   Huang, Tiao Yuan ^a,b   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; ELECTRIC CURRENTS; ELECTRON INJECTION; ELECTRONS; NITRIDES; SECURITY SYSTEMS; TECHNOLOGY;

ANALYSIS METHODS; CHARGE CENTROID; CHARGE TRANSPORTING; ELECTRON DE-TRAPPING; FN PROGRAMMING; HOLE INJECTIONS; INTERNATIONAL SYMPOSIUM; VLSI TECHNOLOGIES;

TRANSIENT ANALYSIS;

EID: 49049091750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530794     Document Type: Conference Paper

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