Study of charge trapping vertical location and capture efficiency of SONOS-type devices by gate-sensing and channel-sensing (GSCS) method

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 119-120

  Lue, Hang Ting ^a   Du, Pei Ying ^a   Wang, Szu Yu ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA LOBES; ATOMS; ELECTRIC CONDUCTIVITY; NITRIDES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY; TRANSIENT ANALYSIS;

ANALYSIS METHODS; CAPTURE EFFICIENCY; CHANNEL SENSING; CHARGE CENTROID; INTERNATIONAL CONFERENCES; MEMORY TECHNOLOGY; NON-VOLATILE; SEMICONDUCTOR MEMORIES; TOTAL CHARGE; TYPE STRUCTURES;

CHARGE TRAPPING;

EID: 50249182912     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.41     Document Type: Conference Paper

References (3)

1. H. T. Lue, et al, IRPS 2007, 3A.4, pp. 177-183.
2. T. Ishida, et al, IRPS 2006, pp. 516-522.
3. A. Arreghini, et al, IEDM 2006, pp. 1-4.