Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates

Journal of Applied Physics

Volumn 96, Issue 7, 2004, Pages 3692-3695

  Yeo, K L ^a   Wee, A T S ^a   Chong, Y F ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; MULTILAYERS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMAL INSULATING MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

BACK-SIDE SPUTTERING; BORON-ENHANCED DIFFUSION (BED); SEMICONDUCTOR MULTILAYER STRUCTURES; SILICON SUBSTRATES;

BORON;

EID: 7044264454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1782959     Document Type: Article

References (14)

1. Y. M. Haddara, B. T. Folmer, M. E. Law, and T. Buyuklimanli, Appl. Phys. Lett. 77, 1976 (2000).
2. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, and R. Simonton, Mater. Sci. Semicond. Process, 1, 17 (1998).
3. E. Arai, D. Iida, Y. Ieki, H. Uchida, and M. Ichimura, Jpn. J. Appl. Phys., Part 1 42, 1503 (2003).
4. S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, and H. E. Maes, J. Appl. Phys. 91, 8919 (2002).
5. C. M. Ng, A. T. S. Wee, A. C. H. Huan, and A. See, Nucl. Instrum. Methods Phys. Res, B 179, 557 (2001).
6. P. Ronsheim, D. Chidambarrao, B. Jagannathan, and D. Hunt, J. Vac. Sci. Technol. B 20, 448 (2002).
7. K. L. Yeo, A. T. S. Wee, R. Liu, C. M. Ng, and A. See, Surf. Interface Anal. 33, 373 (2002).
8. K. L. Yeo, A. T. S. Wee, R. Liu, F. F. Zhou, and A. See, J. Vac. Sci. Technol. A 21, 193 (2003).
9. Z. X. Jiang et al., J. Vac. Sci. Technol. B 21, 1487 (2003).
10. C. Hongo, M. Tomita, M. Takenaka, M. Suzuki, and A. Murakoshi, J. Vac. Sci. Technol. B 21, 1422 (2003).
11. S. Hofmann, Surf. Sci. Anal. 21, 673 (1974).
12. F. Herzel, K. E. Ehwald, B. Heinemann, D. Kruger, R. Kürps, W. Röpke, and H. P. Zeindl, Surf. Sci. Anal. 23, 764 (1996).
13. P. A. Stolk et al., J. Appl. Phys. 81, 6031 (1997).
14. V. Privitera, E. Napolitani, F. Priolo, S. Moffatt, A. La Magna, G. Man-nino, A. Camera, and A. Picariello, Mater. Sci. Semicond. Process. 2, 35 (1999).