Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents

Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2286-2288

  Wierer, J J ^a   Evans, P W ^a   Holonyak Jr , N ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000425976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120071     Document Type: Article

References (10)

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9. R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, in Proceedings of the International Symposium on GaAs and Related Compounds, edited by C. M. Wolfe (Institute of Physics, London, 1979). pp. 1-9. See, also, M. J. Ludowise, J. Appl. Phys. 58, R31 (1985).
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