Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 87-88

  Arzberger, M ^a   Lohner, M ^a   Bohm G ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

TUNNEL JUNCTIONS;

EID: 0033640376     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000039     Document Type: Article

References (11)

1. ++-InGaAsP (1.3μm) formed by rapid thermal processing', J. Appl. Phys., 1990, 67, (2), pp. 884-889
2. 0.47As', Appl. Phys. Lett., 1996, 68, (13), pp. 1841-1843
3. 2) to p-InP', Appl. Phys. Lett., 1997, 70, (1), pp. 99-101
4. WIERER, J.J., EVANS, P.W., and HOLONYAK, N. Jr.: 'Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide defined lateral currents', Appl. Phys. Lett., 1997, 71, (16), pp. 2286-2288
5. WIERER, J.J., EVANS, P.W., HOLONYAK, N. Jr., and KELLOG, D.A.: 'Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources', Appl. Phys. Lett., 1997, 71, (24), pp. 3468-3470
6. LEGAY, P., CAILLET, F., DECOBERT, J., LEPRINCE, L., LE ROUX, G., and QUILLEC, M.: 'Oxide confining layer on an InP substrate', J. Appl. Phys., 1999, 85, (4), pp. 2428-2430
7. OHNOKI, N., KOYAMA, F., and IGA, K.: 'Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure', Appl. Phys. Lett., 1998, 73, (22), pp. 3262-3264
8. ORTSIEFER, M., SHAU, R., BOHM, G., and AMANN, M.-C.: 'Low-resistance InGaAs tunnel junctions on InP for long wavelength VCSELs'. Semiconductor and Integrated Optoelectronics (SIOE'99), Cardiff, Wales, April 1999
9. +-InGaAs as determined by a new evaluation method', J. Electrochem. Soc., 1993, 140, (3), pp. 847-850
10. REEVES, G.K.: 'Specific contact resistance using a circular transmission line model', Solid-State Electron., 1980, 23, pp. 487-490
11. ISELER, G.W.: 'Resistivity of bulk InP' in 'Properties of indium phosphide' (INSPEC, The Institution of Electrical Engineers, London and New York, 1991), EMIS Datareviews Series (6), pp. 25-32