Influence of GeSi interfacial layer on Ge-Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals

Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

  Liu, L Z ^a   Gao, F ^a   Wu, X L ^a,b   Li, T H ^a   Chu, Paul K ^b  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SIO2; GE NANOCRYSTALS; INTERFACIAL LAYER; MATRIX; OPTICAL PHONON BEHAVIOR; OPTICAL PHONON MODES; OPTICAL PHONON PEAK; OPTICAL PHONONS; PHONON CONFINEMENT; SI CONCENTRATION; SI CONTENT; SIO2 FILM; THEORETICAL CALCULATIONS;

AMORPHOUS FILMS; AMORPHOUS SILICON; NANOCRYSTALS; PHONONS; SEMICONDUCTING GERMANIUM COMPOUNDS; TENSILE STRESS;

GERMANIUM;

EID: 70350733446     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3257379     Document Type: Article

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