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Volumn 78, Issue 16, 2008, Pages

Nanocrystal-induced line narrowing of surface acoustic phonons in the Raman spectra of embedded GexSi1-x alloy nanocrystals

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EID: 55449092641     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.165319     Document Type: Article
Times cited : (14)

References (29)
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    • We assume the elastic properties of the NC-Ge0.54 Si0.46 to linearly interpolate between crystals Ge and Si. Density ρp and longitudinal and transverse sound speeds υLp and υTp of Ge, Si, and SiO2 are taken to be ῡ l,Ge =5250 m/s, ῡ t,Ge =3250 m/s, ρGe =5.33 g/ cm3, ῡ l,Si =9017 m/s, ῡ t,Si =5372 m/s, ρSi =2.33 g/ cm3, ρ SiO2 =2.2 g/ cm3, ῡ l, SiO2 =5950 m/s, and ῡ t, SiO2 =3760 m/s (see Ref.).
    • We assume the elastic properties of the NC-Ge0.54 Si0.46 to linearly interpolate between crystals Ge and Si. Density ρp and longitudinal and transverse sound speeds υLp and υTp of Ge, Si, and SiO2 are taken to be ῡ l,Ge =5250 m/s, ῡ t,Ge =3250 m/s, ρGe =5.33 g/ cm3, ῡ l,Si =9017 m/s, ῡ t,Si =5372 m/s, ρSi =2.33 g/ cm3, ρ SiO2 =2.2 g/ cm3, ῡ l, SiO2 =5950 m/s, and ῡ t, SiO2 =3760 m/s (see Ref.).
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    • Saviot, L.1    Murray, D.B.2
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    • Vanderbilt, D.1


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