Analytical quantum-confinement model for short-channel gate-all-around MOSFETs under subthreshold region

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2720-2725

  Wu, Yu Sheng ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gate all around (GAA); MOSFET; Quantum effects; Short channel effect

Indexed keywords

ANALYTICAL MODEL; CHANNEL GATES; DOPING CONCENTRATION; GATE-ALL-AROUND (GAA); MOSFET; MOSFETS; QUANTUM EFFECTS; QUANTUM-CONFINEMENT EFFECTS; SHORT-CHANNEL EFFECT; SUBTHRESHOLD REGION;

COLUMNS (STRUCTURAL); COMPUTER SIMULATION; GALLIUM ALLOYS; LOGIC DESIGN; MODELS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WIRES; SOLID-STATE SENSORS;

MOSFET DEVICES;

EID: 70350726208     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030714     Document Type: Article

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