Device design for a 12.3-megapixel, fully depleted, back-illuminated, high-voltage compatible charge-coupled device

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2612-2622

  Holland, Stephen E ^a   Kolbe, William F ^a   Bebek, Christopher J ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Charge coupled device (CCD); Fully depleted; High voltage; High resistivity substrate; Static induction transistor (SIT)

Indexed keywords

CHARGE-COUPLED DEVICE (CCD); FULLY DEPLETED; HIGH VOLTAGE; HIGH-RESISTIVITY SUBSTRATE; STATIC INDUCTION TRANSISTOR (SIT);

BIAS VOLTAGE; DIGITAL CAMERAS; IMAGE RESOLUTION; SOLID-STATE SENSORS; TRANSISTORS;

SUBSTRATES;

EID: 70350708239     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030631     Document Type: Article

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