Fabrication of back-illuminated, fully depleted charge-coupled devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 2 SPEC. ISS., 2007, Pages 653-657

  Holland, S E ^a   Dawson, K S ^a   Palaio, N P ^a   Saha, J ^a   Roe, N A ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Back illuminated; Charge coupled device; Fabrication techniques; Fully depleted; High resistivity silicon

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC INSULATORS; SILICON WAFERS;

BACK ILLUMINATED; HIGH-RESISTIVITY SILICON; STANDARD PROCESSING TECHNIQUES; WAFER LEVEL;

CHARGE COUPLED DEVICES;

EID: 34547790344     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.05.265     Document Type: Article

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