CCD soft-X-ray detectors with improved high- and low-energy performance

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 I, 2004, Pages 2322-2327

  Burke, B E ^a   Gregory, J A ^a   Loomis, A H ^a   Lesser, M ^b   Bautz, M W ^a   Kissel, S E ^a   Rathman, D D ^a   Osgood III, R M ^a   Cooper, M J ^a   Lind, T A ^a   Ricker, G R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMISORPTION; COMPUTER SIMULATION; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HIGH ENERGY PHYSICS; MOS DEVICES; PHOTONS; SENSITIVITY ANALYSIS; SURFACE TREATMENT; TRANSISTORS; X RAYS;

DIELECTRIC LAYERS; LOW-ENERGY PERFORMANCES; PHOTON ENERGIES (PE); X-RAY DETECTORS;

CHARGE COUPLED DEVICES;

EID: 8344286432     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835901     Document Type: Article

References (11)

1. M. Lesser and V. Iyer, "Enhancing the back illuminated performance of astronomical CCDs," Proc. SPIE, vol. 3355, pp. 446-456, 1998.
2. H. Soltau et al., "Performance of the pn-CCD X-ray detector system designed for the XMM satellite mission," Nucl. Instrum. Methods A, vol. 377, pp. 340-345, 1996.
3. S. E. Holland, G. G. Goldhaber, D. E. Groom, W. W. Moses, C. R. Pennypacker, S. Perlmutter, N. W. Wang, R. J. Stover, and M. Wei, "A 200 × 200 CCD image sensor fabricated on high-resistivity silicon," in IEDM Tech. Dig., 1996, pp. 911-914.
4. S. Holland, D. Groom, N. Palaio, R. Stover, and M. Wei, "Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon," in Proc. IEEE Trans. Electron Devices, vol. 50, Jan. 2003, pp. 225-238.
5. B. Burke, J. Gregory, M. Bautz, G. Prigozhin, S. Kissel, B. Kosicki, A. Loomis, and D. Young, "Soft-X-ray CCD imagers for AXAF," IEEE Trans. Electron Devices, vol. 44, pp. 1633-1642, Oct. 1997.
6. +-doped back-illuminated CCD imager," Proc. SPIE, vol. 1447, pp. 156-164, Feb. 1991.
7. M. van den Berg, A. den boggende, T. Bootsma, J. den Herder, F. Jansen, P. de Korte, E. van Zwet, T. Eaton, and R. Ginige, "Back-illuminated CCDs made by gas immersion laser doping," Nucl. Instrum. Methods A, vol. 377, pp. 312-319, 1996.
8. B. E. Burke, J. A. Gregory, A. H. Loomis, S. D. Calawa, P. M. Nitishin, T. A. Lind, M. J. Cooper, D. J. Young, P. W. O'Brien, B. B. Kosicki, G. A. Luppino, and J. L. Tonry, "Broadband (200-1100) back-illuminated CCD imagers," in Scientific Detectors for Astronomy. Dordrecht, The Netherlands: Kluwer, 2004, pp. 41-49.
9. S. Parker, "A proposed VLSI pixel device for particle detection," Nucl. Instrum. Methods A, vol. 275, pp. 494-516, 1989.
10. J. Nishizawa, T. Terasaki, and J. Shibata, "Field-effect transistor versus analog transistor (static induction transistor)," IEEE Trans. Electron Devices, vol. 22, pp. 185-197, Jan. 1975.
11. A. Karcher, C. J. Bebek, W. F. Kolbe, V. Prasad, D. Maurath, M. Uslenghi, and M. Wagner, "Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs," in Proc. IEEE Nucl. Sci. Symp., 2003, paper N38-7.