Photon generation by silicon diodes in avalanche breakdown

Applied Physics Letters

Volumn 73, Issue 7, 1998, Pages 871-872

  Akil, N ^a   Kerns, S E ^a   Kerns, D V ^a   Hoffmann, A ^b   Charles, J P ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b SUPELEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012534572     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121971     Document Type: Article

References (13)

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5. G. Deboy and J. Kolzer, Semicond. Sci. Technol. 9, 1017 (1993).
6. P. A. Wolff, J. Phys. Chem. Solids 16, 184 (1960).
7. D. K. Gautam, W. S. Khokle, and K. B. Garg, Solid-State Electron. 31, 219 (1988).
8. D. K. Gautam, W. S. Khokle, and K. B. Garg, Solid-State Electron. 31, 1119 (1988).
9. The photomultiplier output is constant and does not require correction over the measurement range.
10. N. Akil, D. V. Kerns, Jr., S. E. Kerns, A. Hoffmann, and J.-P. Charles (unpublished).
11. T. Figielski and A. Torum, International Conference on Physics of Semiconductors, Exeter (Pergamon, London, 1962), pp. 863-868.
12. G. A. Baraff, Phys. Rev. 133, 26 (1964).
13. The representation of the theory of Gautam et al. presented here differs from that published by the authors. The authors apparently use a constant value for the index of refraction of silicon. The results presented here use the photon energy-specific values for the index of refraction given in Handbook of Optical Constants of Solids, edited by Edward D. Palik (Academic, Orlando, 1985), p. 547.