Commercialisation of full depletion scientific CCDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6276, Issue , 2006, Pages

  Jorden, Paul ^a   Ball, Kevin ^a   Bell, Ray ^a   Burt, David ^a   Guyatt, Neil ^a   Hadfield, Kevin ^a   Jerram, Paul ^a   Pool, Peter ^a   Pike, Andrew ^a   Holland, Andrew ^b   Murray, Neil ^b  

^a E2V TECHNOLOGIES   (United Kingdom)

^b BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

CCD; Commercial manufacture; Full depletion; High rho; Red sensitivity

Indexed keywords

COMMERCIAL MANUFACTURE; FULL DEPLETION; HIGH-RHO; RED SENSITIVITY;

IMAGING SYSTEMS; OPTICAL SENSORS; SILICON; X RAY SPECTROSCOPY;

CHARGE COUPLED DEVICES;

EID: 33749349278     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.670174     Document Type: Conference Paper

References (8)

1. See http://snap.lbl.gov/
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6. Bebek et al, "Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon", 2002, IEEE Trans on Nuclear Science, 49, 1221.
7. Holland et al, "Fully-Depleted, Back-Illuminated Charge-Coupled Devices Fabricated on High-Resistivity Silicon", 2003, IEEE Trans on Electron Devices, 50, 225.
8. P O'Connor et al, "Silicon Sensor Thickness Optimization for LSST", 2006, Proc SPIE 6276.