Wide-Bandgap III-V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Current Applied Physics

Volumn 10, Issue 2, 2010, Pages 646-651

  Mukherjee, Moumita ^a   Roy, Sitesh Kumar ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

High power; Punch through factor; SDR IMPATT; Series resistance; Terahertz device; Wz GaN

Indexed keywords

HIGH POWER; PUNCH THROUGH FACTOR; SDR IMPATT; SERIES RESISTANCE; TERAHERTZ DEVICE; WZ-GAN;

COMMUNICATION SYSTEMS; CONVERSION EFFICIENCY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INFORMATION RETRIEVAL; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM;

IMPATT DIODES;

EID: 70350707606     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.08.010     Document Type: Article

References (20)

1. Siegel P.H. IEEE Trans. Microwave Theory Technol. 50 (2002) 910-926
2. Buniatyan V.V., and Aroutiounian V.M. J. Phys. D: Appl. Phys. 40 (2007) 6355-6385
3. Inoki C.K., Kaun T.S., Lee C.D., Sagar A., Feenstra R.M., Koleske D.D., Dfaz D.Z., Bohn P.W., and Adesida I. J. Elect. Mater. 32 (2003) 855-860
4. Mukherjee M., Mazumder N., Roy S.K., and Goswami K. Semicond. Sci. Technol. 22 (2007) 1258-1267
5. Mukherjee M., Mazumder N., and Roy S.K. IEEE Trans. Device Mater. Reliab. 8 (2008) 608-620
6. Sze S.M. Physics of Semiconductor Devices. second ed. (1991), Wiley Eastern Limited
7. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, in: J.H. Miller (Ed.), Proceedings of the First Conference on Numerical Analysis of Semiconductor Devices (NASECODE I), Boole, Dublin, 1979, pp. 266-274.
8. M. Mukherjee, N. Mazumder, MRS Website: Symposium CC: Material and Material Structures Enabling Terahertz Technology: Paper No. 7.7 MRS Spring Meeting 2007, April 10-11, San Francisco, CA, USA, 2007.
9. Scharfetter D.L., and Gummel H.K. IEEE Trans. Electron Devices 16 (1969) 64-77
10. H.K. Gummel, J.L. Blue, IEEE Trans. Electron Devices, ED-14, 1967, pp. 569-580.
11. S.K. Roy, J.P. Banerjee, S.P. Pati, in: Proceedings of the Fourth Conference on Numerical Analysis of Semiconductor Devices (NASECODE IV), Boole, Dublin, 1985, pp. 494-500.
12. M.G. Alderstein, L.H. Holway, S.L. Chu, IEEE Trans. Electron Devices, ED-30, 1983, 179-182.
13. Groves I.S., and Lewis D.E. Electron. Lett. 8 (1972) 8
14. Ghosal D., and Roy S.K. Int. J. Electron. 5 (1995)
15. Mitra M., Das M., Kar S., and Roy S.K. IEEE Trans. Electron Devices 40 (1993) 1890
16. M. Mukherjee, N. Mazumder, A. Dasgupta, in: Proceedings of the 2007 IEEE International Symposium on Integrated Circuits (IEEE/ISIC-2007), Nanyang Technological University and IEEE-Singapore, September 26-28, 2007, pp. 61-64.
17. Eisele H., and Haddad G.I. Microwave Semiconductor Device Physics. In: Sze S.M. (Ed) (1997), Wiley, New York 343
18. Burm J., Chu K., Davis W.A., Schaff W.J., Eastman L.F., and Eustis T.J. Appl. Phys. Lett. 70 (1997) 464
19. Chu C.F., Yu C.C., Wang Y.K., Tsai J.Y., Lai F.I., and Wang S.C. Appl. Phys. Lett. 77 (2000) 3423-3425
20. M. Mukherjee, S.K. Roy, in: Proceedings of IEEE International Symposium on Microwaves-2008, IEEE-ISM 08, December 4-6, Indian Institute of Science, IISc., Bangalore, India, 2008.