Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation

Vacuum

Volumn 84, Issue 3, 2009, Pages 410-414

  Dao, Vinh Ai ^a   Nguyen, Van Duy ^a   Heo, Jongkyu ^a   Choi, Hyungwook ^a   Kim, Youngkuk ^a   Lakshminarayan, Nariangadu ^b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b MADRAS CHRISTIAN COLLEGE   (India)

Author keywords

ICP CVD; Silicon oxide; Surface passivation

Indexed keywords

DENSITY OF INTERFACE STATE; FILM PROPERTIES; FLOW RATIOS; GAS RATIO; ICP-CVD; INTERFACE STATE; MINIMUM VALUE; NITROUS OXIDE; P-TYPE SILICON; SILICON SURFACES; SUBSTRATE TEMPERATURE; SURFACE PASSIVATION;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; DEPOSITION; HYDROGEN; HYDROGEN BONDS; INDUCTIVELY COUPLED PLASMA; NITROGEN OXIDES; OXIDE FILMS; PASSIVATION; PLASMA DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON OXIDES; THIN FILMS; VAPORS;

AMORPHOUS SILICON;

EID: 70350513008     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.09.002     Document Type: Article

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