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Volumn 100, Issue PART 4, 2008, Pages
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Study on the low leakage current of an MIS structure fabricated by ICP-CVD
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
ATOMS;
CRYSTAL ORIENTATION;
CRYSTAL STRUCTURE;
DEPOSITION;
DIELECTRIC FILMS;
FILM PREPARATION;
HYDROGEN BONDS;
INDUCTIVELY COUPLED PLASMA;
ION BOMBARDMENT;
LEAKAGE CURRENTS;
OXIDE FILMS;
PLASMA CVD;
REFRACTIVE INDEX;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON OXIDES;
SINGLE CRYSTALS;
TEMPERATURE;
THERMOOXIDATION;
THIN FILMS;
VAPOR DEPOSITION;
ENTERTAINMENT INDUSTRY;
FABRICATION;
HALL MOBILITY;
HOLE MOBILITY;
LOW-K DIELECTRIC;
NANOSCIENCE;
SILICA;
VACUUM APPLICATIONS;
DIFFRACTION PEAKS;
FABRICATION OF THIN FILMS;
HIGH DENSITY PLASMAS;
INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION;
LOW-LEAKAGE CURRENT;
PREFERRED ORIENTATIONS;
SEMICONDUCTOR INDUSTRY;
SILICON DIOXIDE FILM;
THERMAL OXIDATION;
CHEMICAL VAPOR DEPOSITION;
FILM PREPARATION;
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EID: 77954340731
PISSN: 17426588
EISSN: 17426596
Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/100/4/042030 Document Type: Conference Paper |
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Times cited : (6)
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References (11)
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