Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 11, 2007, Pages 4169-4173

  Jeong, Chaehwan ^a   Boo, Seongjae ^a   Jeon, Minsung ^b   Kamisako, Koichi ^b  

^a Korea Institute of Industrial Technology   (South Korea)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon; ICP CVD; Intrinsic; Plasma; Solar cell

Indexed keywords

ABSORPTION LAYERS; DEPOSITION PROCESSING; GAS RATIO; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION (ICP-CVD); SOLAR-CELL APPLICATIONS;

ABSORPTION; AMORPHOUS FILMS; AMORPHOUS SILICON; DIRECT ENERGY CONVERSION; FILM PREPARATION; GAS ABSORPTION; INDUCTIVELY COUPLED PLASMA; METALLIC FILMS; METALLIZING; PASSIVATION; PHOTORESISTS; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; VAPORS;

CHEMICAL VAPOR DEPOSITION;

HYDROGEN; NANOMATERIAL; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; GAS; HEAT; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; POWER SUPPLY; SOLAR ENERGY; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC POWER SUPPLIES; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; HEAT; HYDROGEN; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SOLAR ENERGY; SURFACE PROPERTIES;

EID: 38449104033     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.064     Document Type: Conference Paper

References (12)

1. R. A. Street, Hydrogenerated Amorphous Silicon, Cambridge University Press, Cambridge (1991).
2. Takahashi and M. Konagai, Amorphous Silicon Solar Cells, North Oxford Academic, London (1986).
3. A. Catalano, Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices, edited by J. Kanicki, Artech House, Boston (1991).
4. J. J. Loferski, J. Appl. Phys. 27, 277 (1956).
5. M. Schmidt, L. Korte, K. Kliefoth, A. Schepke, R. Stangl, A. Laades, E. Conrad, K. Bendel, W. Fuhs, M. Scherff, and W. Fahrner, 19th EPVSEC, Paris (2004).
6. S. Ashida, M. R. Shim, and M. A. Lieberman, J. Vac. Sci. Technol. A 14, 391 (1996).
7. G. E. Jellison, Jr., V. I. Merkulov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, and J. B. Caughman, Thin Solid Films 377-378, 68 (2000).
8. T. Saithoh, T. Shimada, and M. Migitaka, J. Non-Cryst. Solids 59-60, 715 (1983).
9. Ch. Hof, Y. Ziegler, R. Platz, N. Wyrch, and A. Shah, J. Non-Cryst. Solids 227-230, 287 (1998).
10. K. F. Feenstra, R. E. I. Schropp, and W. F. Van der Weg, J. Appl. Phys. 85/9, 6843 (1999).
11. H. Aguas, Y. Nunes, E. Fortunato, P. Gordo, M. Maneria, and R. Martins, Thin Film Solids 383, 185 (2001).
12. W. M. M. Kessels, J. P. M. Hoefnagels, E. Langereis, and M. CM. Van de Sanden, Thin Film Solids 501, 88 (2006).