Local analysis of the edge dislocation core in BaTiO3 thin film by STEM-EELS

Journal of Microscopy

Volumn 236, Issue 2, 2009, Pages 128-131

  Kurata, H ^a   Isojima, S ^a   Kawai, M ^a   Shimakawa, Y ^a   Isoda, S ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

BaTiO3; Dislocation; EELS; ELNES; HAADF

Indexed keywords

BARIUM TITANATE; DISSOCIATION; EDGE DISLOCATIONS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; THIN FILMS;

DISLOCATION; EDGE DISLOCATION CORES; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ELNES; EPITAXIAL BATIO 3 THIN FILMS; HAADF; LOCAL ANALYSIS; STEM-EELS; THIN-FILMS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

BARIUM DERIVATIVE; BARIUM TITANATE; OXYGEN; UNCLASSIFIED DRUG;

CHEMICAL STRUCTURE; CONFERENCE PAPER; ELECTRON ENERGY LOSS SPECTROSCOPY; PRIORITY JOURNAL; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

EID: 70350496199     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2009.03265.x     Document Type: Conference Paper

References (18)

1. Arslan, I., Bleloch, A., Stach, E.A. Browning, N.D 2005) Atomic and electronic structure of mixed and partial dislocations in GaN. Phys. Rev. Lett. 94, 025504-1 02550-4.
2. Batson, P.E. (1993) Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity. Nature 366, 727 728.
3. Batson, P.E. (2000) Structural and electronic characterization of a dissociated 60° dislocation in GeSi. Phys. Rev. B 61, 16633 16641.
4. 3 and aΣ3 boundary: electronic structure and dispersion forces. Ultramicroscopy 86, 303 318.
5. Blaha, P., Schwarz, K., Madsen, G.K.H., Kvasnicka, D. Luitz, J. (2001) WIEN2K: An Augumented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties, Vienna University of Technology, Austria.
6. Chu, M.W., Szafraniak, I., Scholz, R., Harnagea, C., Hesse, D., Alexe, M. Gösele, U. (2004) Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites. Nat. Mater. 3, 87 90.
7. Egerton, R.F. (1996) Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd edn. Plenum Press, New York and London.
8. 3. Ultramicroscopy 106, 1053 1061.
9. 3. Phys. Rev. B 73, 125413-1 125413-7.
10. 3(001). J. Appl. Phys. 102, 114311-1 114311-4.
11. Klie, R.F., Beleggia, M., Zhu, Y., Buban, J.P. Browning, N.D. (2003) Atomic-scale model of the grain boundary potential in perovskite oxides. Phys. Rev. B 68, 214101-1 214101-10.
12. Muller, D.A., Shashkov, D.A., Benedek, R., Yang, L.H., Silcox, J. Seidman, D.N. (1998) Atomic scale observations of metal-induced gap states at {222} MgO/Cu interfaces. Phys. Rev. Lett. 80, 4741 4744.
13. Muller, D.A., Sorsch, T., Moccio, S., Baumann, F.H., Evans-Lutterodt, K. Timp, G. (1999) The electronic structure at the atomic scale of ultrathin gate oxides. Nature 399, 758 761.
14. Pennycook, S. J. Jesson, D. E. (1991) High-resolution Z-contrast imaging of crystals. Ultramicroscopy 37, 14 38.
15. 3 thin films. Philos. Mag. A 79, 2461 2483.
16. Xin, Y., James, E.M., Arslan, I., et al 2000) Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films. Appl. Phys. Lett. 76, 466 468.
17. 3. Phys. Rev. B 66, 094108-1 094108-8.
18. 3. Phys. Rev. B 69, 144103-1 144103-7.