Influence of flow ratio of N2 to (N2+Ar) mixture on the structure and properties of zirconium nitride films prepared by radio frequency magnetron sputtering

Journal of Materials Research

Volumn 24, Issue 10, 2009, Pages 3206-3212

  Yao, Bin ^a   Sui, Yingrui ^a,b   Liu, Jiukai ^c   Liu, Bo ^a   Wang, Lihong ^a  

^a JILIN UNIVERSITY   (China)

^b JILIN NORMAL UNIVERSITY   (China)

^c Jilin Agriculture Engineering Polytechnic College   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; FLOW RATIOS; N-COMPOUNDS; P-TYPE CONDUCTIVITY; RADIO-FREQUENCY-MAGNETRON SPUTTERING; ROCK-SALT STRUCTURE; SI (100) SUBSTRATE; SINGLE PHASE; SPUTTERING GAS; STRUCTURE AND PROPERTIES; ZIRCONIUM NITRIDE; ZRN FILMS;

ARGON; GLASS; LATTICE CONSTANTS; MAGNETRONS; NITRIDES; PHASE TRANSITIONS; RADON;

ZIRCONIUM;

EID: 70350436657     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0383     Document Type: Article

References (21)

1. x / i-C. Thin Solid Films 192, 253 (1990).
2. L. Gribaudo, D. Arias, and J. Abriata: The N-Zr (nitrogen-zirconium) system. J. Phase Equilib. 15,441 (1994).
3. V.N. Zhitomirsky, I. Grimberg, and R.L. Boxman: Vacuum arc deposition and microstructure of ZrN-based coatings. Surf. Coat. Technol. 94-95, 207 (1997).
4. D. Wu, Z. Zhang, W. Fu, X. Fan, and H. Guo: Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering. Appl. Phys. A 64, 593 (1997).
5. M.B. Lee, M. Kawasaki, M. Yoshimot, and M. Kumagai: Epitaxial growth of highly crystalline and conductive nitride films by pulsed laser deposition. Jpn. J. Appl. Phys. 33, 6308 (1994).
6. L. Pichon, T. Girardeau, A. Straboni, F. Lignou, P. Guerin, and J. Perriere: Zirconium nitrides deposited by dual ion beam sputtering: Physical properties and growth modelling. Appl. Surf. Sci. 150, 115 (1999).
7. x thin films by reactive DC magnetron sputtering. Thin Solid Films 444, 111 (2003).
8. J.P. Dauchot, S. Edart, M. Wautelet, and M. Hecq: Synthesis of zirconium nitride films monitored by in situ soft x-ray spectrometry. Vacuum 46, 927 (1995).
9. A.L. Ivanovskii, N.I. Medvedeva, and S.V. Okatov: Effect of vacancies on the electronic structure and bonding of zirconium nitride. Inorg. Mater. 37, 459 (2001).
10. D.I. Bazhanov, A.A. Knizhnik, A.A. Safonov, A.A. Bagatur'yants, M.W. Stoker, and A.A. Korkin: Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides. J. Appl. Phys. 97,044108 (2005).
11. 4. Z. Anorg. Allg. Chem. 329, 36 (1964).
12. 4 structure. Nat. Mater. 2, 185 (2003).
13. 4 stabilized by stress. Nat. Mater. 4, 317 (2005).
14. 4 studied by resonant photoemission. Phys. Rev. B 51, 17984 (1995).
15. M. Del Re, R. Couttebaron, J.P. Dauchot, P. Leclère, G. Terwagne, and M. Hecq: Study of ZrN layers deposited by reactive magnetron sputtering. Surf. Coat. Technol. 174-175, 240 (2003).
16. 4 versus Si02 and ZrO2 charge transfer and electrostatic effects. Phys. Rev. B 63, 125117 (2001).
17. P.R. Netterfield, P.J. Martin, and D.R. Mckenzie: Properties of ZrNx prepared by ion-assisted deposition. J. Mater. Sei. Lett. 9, 972 (1990).
18. P. Prieto, L. Galan, and J.M. Sanz: Electronic structure of insulating zirconium nitride. Phys. Rev. B 47, 1613 (1993).
19. M.A. Signore, A. Rizzo, L. Mirenghi, M.A. Tagliente, and A. Cappello: Characterization of zirconium oxynitride films obtained by radio frequency magnetron reactive sputtering. Thin Solid Films 515, 6798 (2007).
20. P. Kroll: Hafnium nitride with thorium phosphide structure: Physical properties and an assessment of the Hf-N, Zr-N, and Ti-N phase diagrams at high pressures and temperatures. Phys. Rev. Lett. 90, 125501 (2003).
21. 4: A class of hard materials. Phys. Rev. B 68, 184108 (2003).