Defects in Ge and Si caused by 1 MeV Si+ implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 425-429

  Hickey, D P ^a   Bryan, Z L ^b   Jones, K S ^b   Elliman, R G ^b   Haller, E E ^c,d  

^a University of Florida   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION; NONAMORPHIZING IMPLANTS;

ANNEALING; DEFECTS; ION IMPLANTATION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 38849097204     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2834557     Document Type: Article

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