Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 793-796

  Jones, R E ^a   Thomas, S G ^b   Bharatan, S ^b   Thoma, R ^b   Jasper, C ^b   Zirkle, T ^b   Edwards, N V ^b   Liu, R ^b   Wang, X D ^b   Xie, Q ^b   Rosenblad, C ^c   Ramm, J ^c   Isella, G ^d   Von Kanel H ^d   Oh, J ^e   Campbell, J C ^e  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c Balzers AG   (Liechtenstein)

^d ETH ZURICH   (Switzerland)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; EPITAXIAL GROWTH; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY;

BUFFER LAYERS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0036923797     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, "High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers," Appl. Phys. Lett., vol. 73, pp. 2125-2127, 12 October 1998.
2. G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, "High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration," IEEE Trans. Elec. Dev., vol. 48, pp. 1092-1096, June 2001.
3. H.-C. Luan, D.R. Lim, K.K. Lee, K. M. chem., J. G. Sandland, K. Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett., vol. 75, pp. 2909-2911, 8 November 1999.
4. Integrated Systems Engineering User Guides for DESSIS, Release 7.5, Volume4a.