Through wafer via technology for 3-D packaging

2005 6th International Conference on Electronics Packaging Technology

Volumn 2005, Issue , 2005, Pages 57-60

  Feng, Guoqiang ^a   Peng, Xiao ^a   Cai, Jian ^a   Wang, Shuidi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

3 D packaging; Microsystem packaging; Photosensitive dry film; Through wafer via

Indexed keywords

ANISOTROPY; ELECTRIC INSULATION; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; REACTIVE ION ETCHING; SILICON ALLOYS; THIN FILMS;

3D PACKAGING; LASER DRILLING; MICROSYSTEM PACKAGING; PHOTOSENSITIVE DRY FILMS;

ELECTRONICS PACKAGING;

EID: 33846315981     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2005.1564661     Document Type: Conference Paper

References (8)

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5. th IEEE International Micro Electro Mechanical Systems Conf, Las Vegas, US, Jan. 2002, pp. 388-391.
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7. Michael Köhler. Transl, by Antje Wiegand. Etching in microsystem technology. Wiley-VCH (Weinheim, New York, Chichester; Brisbance, Singapore, Toronto, 1999), pp. 90-108.
8. V G Kutchoukov, M Shikida, J R Mollinger and A Bossche, "Through-wafer interconnect technology for silicon", J. Micromech. Microeng. 14 (2004), pp. 1029-1036.