Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 63-66

  Hekmatshoar, Bahman ^a   Kattamis, Alex Z ^a   Cherenack, Kunigunde H ^a   Long, Ke ^a   Chen, Jian Zhang ^a   Wagner, Sigurd ^a   Sturm, James C ^a   Rajan, Kamala ^b   Hack, Michael ^b  

^a Princeton University   (United States)

^b UNIVERSAL DISPLAY CORPORATION   (United States)

Author keywords

Active matrix; Active matrix organic light emitting diode (AMOLED) display; Amorphous silicon; Clear plastic; Stability; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; LIGHT EMISSION; PLASTICS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILM TRANSISTORS; TRANSPARENCY;

ACTIVE-MATRIX ORGANIC LIGHT-EMITTING-DIODE (AMOLED) DISPLAY; PLASTIC SUBSTRATE; SUBSTRATE TRANSPARENCY;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 37549060302     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910800     Document Type: Article

References (18)

1. S. Forrest, P. Burrows, and M. Thompson, "The dawn of organic electronics," IEEE Spectr., vol. 37, no. 8, pp. 29-34, Aug. 2000.
2. R. Dawson, Z. Shen, D. A. Furest, S. Connor, J. Hsu, M. G. Kane, R. G. Stewart, A. Ipri, C. N. King, P. J. Green, R. T. Flegal, S. Pearson, W. A. Tang, S. Van Slyke, F. Chen, J. Shi, M. H. Lu, and J. C. Sturm, "The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays," in IEDM Tech. Dig., Dec. 1998, pp. 875-878.
3. M. Hack, J. J. Brown, J. K. Mahon, R. C. Kwong, and R. Hewitt, "Performance of high-efficiency AMOLED displays," J. Soc. Inf. Disp., vol. 9, no. 3, pp. 191-195, Sep. 2001.
4. R. Dawson, M. G. Kane, Z. Shen, D. A. Furst, S. Connor, J. Hsu, R. G. Stewart, A. Ipri, C. N. King, P. J. Green, R. T. Flegal, S. Pearson, W. A. Barrow, E. Dickey, K. Ping, S. Robinson, C. W. Tang, S. Van Slyke, F. Chen, J. Shi, J. C. Sturm, and M. H. Lu, "Active matrix organic light emitting diode pixel design using polysilicon thin film transistors," in Proc. Annu. Meeting Laser Electro-Opt. Soc., Dec. 1998, vol. 1, pp. 128-129.
5. J. Lih, C. Sung, C. Li, T. Hsiao, and H. Lee, "Comparison of a-Si and poly-Si for AMOLED displays," J. Soc. Inf. Disp., vol. 12, no. 4, pp. 367-371, Dec. 2004.
6. T. Tsujimura, Y. Kobayashi, K. Murayama, A. Tanaka, M. Morooka, E. Fukumoto, H. Fujimoto, J. Sekine, K. Kanoh, K. Takeda, K. Miwa, M. Asano, N. Ikeda, S. Kohara, S. Ono, C. Chung, R. Chen, J. Chung, C.-W. Huang, H. Guo, C. Yang, C. Hsu, H. Huang, W. Riess, H. Riel, S. Karg, T. Beierlein, D. Gundlach, S. Alvarado, C. Rost, P. Muller, F. Libsch, M. Mastro, R. Polastre, A. Lien, J. Stanford, and R. Kaufman, "A 20-inch OLED displays driven by super-amorphous silicon technology," in Proc. SID Tech. Dig., 2003, vol. 34, pp. 6-9.
7. J.-J. Lih, C.-F. Sung, M. S. Weaver, M. Hack, and J. J. Brown, "A phosphorescent active-matrix OLED display driven by amorphous silicon backplane," J. Soc. Inf. Disp., vol. 34, no. 1, pp. 14-17, May 2003.
8. C. C. Wu, S. D. Theiss, G. Gu, M. H. Lu, J. C. Sturm, S. Wagner, and S. R. Forrest, "Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates," IEEE Electron Device Lett., vol. 18, no. 12, pp. 609-612, Dec. 1997.
9. M. J. Powell, C. Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, "Defect pool in amorphous-silicon thin-film transistors," Phys. Rev. B, Condens. Matter, vol. 45, no. 8, pp. 4160-4170, Feb. 1992.
10. K. Long, A. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J. C. Sturm, M. Stevenson, G. Yu, and M. O'Regan, "Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-entitting displays," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1789-1796, Aug. 2006.
11. K. Long, A. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm, "Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures," in Proc. Device Res. Conf. Dig. Jun. 2005, vol. 1, pp. 141-142.
12. K. Long, A. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C," IEEE Electron Device Lett., vol. 27, no. 2, pp. 111-113, Feb. 2006.
13. x gate dielectric deposition power and temperature on a-Si:H TFT stability," IEEE Electron Device Lett., vol. 28, no. 7, pp. 606-608, Jul. 2007.
14. K. R. Sarma, C. Chanley, S. Dodd, J. Roush, J. Schmidt, G. Srdanov, M. Stevenson, R. Wessel, J. Innocenzo, G. Yu, M. O'Regan, W. A. MacDonald, R. Eveson, K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, "Active matrix OLED using 150 °C a-Si TFT backplane built on flexible plastic substrate," in Proc. SPIE - Int. Soc. Opt. Eng., Apr. 2003, vol. 5080, pp. 180-191.
15. J. H. Ahn, E. Y. Lee, S. H. Won, S. H. Han, S. M. Cho, J. H. Kim, T. J. Park, S. K. Kwon, Y. K. Lee, K. M. Kim, and J. Jang, "2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate," in Proc. SID Tech. Dig., May 2005, vol. 36, pp. 1542-1545. no. 1.
16. I.-C. Cheng, A. Kattamis, K. Long, J. C. Sturm, and S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Disp., vol. 13, no. 7, pp. 563-568, Jul. 2005.
17. K. Long, I.-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, and J. C. Sturm, "Amorphous-silicon thin-film transistors made at 280 °C on clear-plastic substrates by interfacial stress engineering," J. Soc. Inf. Disp., vol. 15, no. 3, pp. 167-176, Mar. 2007.
18. M. S. Weaver, R. C. Kwong, V. A. Adamovich, M. Hack, and J. J. Brown, "Recent advances in phosphorescent OLEDs for small- and large-area-display sizes," J. Soc. Inf. Disp., vol. 14, no. 5, pp. 449-452, May 2006.