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Volumn 8, Issue 4, 2009, Pages

Imaging budgets for extreme ultraviolet optics: Ready for 22-nm node and beyond

Author keywords

CDU budget; Extreme ultraviolet lithography; Imaging; Simulation

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; NANOTECHNOLOGY; PHOTORESISTS; THREE DIMENSIONAL; ULTRAVIOLET DEVICES;

EID: 70349912240     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3238543     Document Type: Article
Times cited : (7)

References (10)
  • 2
    • 70349932175 scopus 로고    scopus 로고
    • version B-2008.06, Synopsys Inc., Mountain View, CA
    • Sentaurus Lithography (EUV), version B-2008.06, Synopsys Inc., Mountain View, CA (2009).
    • (2009) Sentaurus Lithography (EUV)
  • 3
    • 57549099439 scopus 로고    scopus 로고
    • Photoresist induced contrast loss and its impact on EUV imaging extendibility
    • K. van Ingen Schenau, S. Hansen, B. Pierson, and J. van Schoot, "Photoresist induced contrast loss and its impact on EUV imaging extendibility," Proc. SPIE 6923, 692314 (2008).
    • (2008) Proc. SPIE , vol.6923 , pp. 692314
    • Van Ingen Schenau, K.1    Hansen, S.2    Pierson, B.3    Van Schoot, J.4
  • 4
    • 35148868242 scopus 로고    scopus 로고
    • Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithography
    • Y. Kishikawa, M. Kawashima, A. Ohkubo, Y. Iwasaki, S. Takeuchi, M. Yoshii, and T. Honda, "Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithography," Proc. SPIE 6520, 6520L (2007).
    • (2007) Proc. SPIE , vol.6520
    • Kishikawa, Y.1    Kawashima, M.2    Ohkubo, A.3    Iwasaki, Y.4    Takeuchi, S.5    Yoshii, M.6    Honda, T.7
  • 6
    • 79959340556 scopus 로고    scopus 로고
    • EUV simulation extension study for mask shadowing effect and its correction
    • H. Kang, S. Hansen, J. van Schoot, and K. van Ingen Schenau, "EUV simulation extension study for mask shadowing effect and its correction," Proc. SPIE 6921, 69213I-1 (2008).
    • (2008) Proc. SPIE , vol.6921
    • Kang, H.1    Hansen, S.2    Van Schoot, J.3    Van Ingen Schenau, K.4
  • 7
    • 0035768220 scopus 로고    scopus 로고
    • Understanding Bossung curvature asymmetry and focus shift effect in EUV lithography
    • P. Y. Yan, "Understanding Bossung curvature asymmetry and focus shift effect in EUV lithography," Proc. SPIE 4562, 279 (2002).
    • (2002) Proc. SPIE , vol.4562 , pp. 279
    • Yan, P.Y.1
  • 8
    • 0034769038 scopus 로고    scopus 로고
    • The impact of the EUV mask phase response on the asymmetry of bossung curves as predicted by rigorous EUV mask simulations
    • C. Krautschik, M. Ito, I. Nishiyama, and K. Otaki, "The impact of the EUV mask phase response on the asymmetry of bossung curves as predicted by rigorous EUV mask simulations," Proc. SPIE 4343, 392 (2001).
    • (2001) Proc. SPIE , vol.4343 , pp. 392
    • Krautschik, C.1    Ito, M.2    Nishiyama, I.3    Otaki, K.4
  • 10
    • 84903022476 scopus 로고    scopus 로고
    • International Roadmap of Technology for Semiconductors
    • International Roadmap of Technology for Semiconductors, see http://www.itrs.net/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.