Atomic force microscopy investigation of noble gas ion bombardment on InP: effect of ion energy

Surface and Interface Analysis

Volumn 24, Issue 8, 1996, Pages 497-502

  Demanet, C M ^a   Vijaya Sankar, K ^a   Malherbe, J B ^a   van der Berg, N G ^a   Odendaal, R Q ^a  

^a UNIVERSITY OF TRANSKEI   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; HEATING; INERT GASES; ION BOMBARDMENT; POLISHING; SEMICONDUCTOR DOPING; SPUTTERING; SURFACE ROUGHNESS; VACUUM;

INDIUM PHOSPHIDE; ION DOSE DENSITY; ROOT MEAN SQUARE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030216896     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199608)24:8<497::AID-SIA143>3.0.CO;2-K     Document Type: Article

References (27)