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Volumn 142, Issue 1-2, 1998, Pages 35-42

Range profiles and lattice location of MeV implant of Sb in Si (1 0 0)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; HELIUM; ION IMPLANTATION; IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

EID: 0032089595     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00207-9     Document Type: Article
Times cited : (11)

References (35)
  • 3
    • 0000498355 scopus 로고
    • J.S. Williams et al., Nucl. Instr. and Meth. B 80/81 (1993) 507; M.V. Rao, Nucl. Instr. and Meth. B 79 (1993) 645.
    • (1993) Nucl. Instr. and Meth. B , vol.79 , pp. 645
    • Rao, M.V.1
  • 21
    • 0017948718 scopus 로고
    • J.R. Dennis, E.B. Hale, J. Appl. Phys. 49 (1978) 1119; J. Narayan, D. Fathy, O.S. Oen, O.W. Holland, J. Vac. Sci. Technol. A 2 (1984) 1303.
    • (1978) J. Appl. Phys. , vol.49 , pp. 1119
    • Dennis, J.R.1    Hale, E.B.2
  • 31
    • 0003621450 scopus 로고
    • Freeman, San Francisco
    • L. Pauling, General Chemistry, Freeman, San Francisco, 1970, p. 195.
    • (1970) General Chemistry , pp. 195
    • Pauling, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.