Pseudo-relaxor behaviour induced by Maxwell-Wagner relaxation

Solid State Communications

Volumn 149, Issue 45-46, 2009, Pages 2017-2020

  Wang, C C ^a   Dou, S X ^a  

^a UNIVERSITY OF WOLLONGONG   (Australia)

Author keywords

A: Semiconductors; D: Dielectric response

Indexed keywords

A: SEMICONDUCTORS; ARRHENIUS; CATALANS; D: DIELECTRIC RESPONSE; DIELECTRIC PERMITTIVITIES; DIELECTRIC RESPONSE; DOUBLE LAYERS; EMPIRICAL FORMULAS; MAXWELL-WAGNER RELAXATION; PEAK INTENSITY; PEAK POSITION; REAL PART; RELAXOR BEHAVIOUR; RELAXORS; TEMPERATURE DEPENDENCE;

TEMPERATURE DISTRIBUTION;

MAXWELL EQUATIONS;

EID: 70349734581     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.08.031     Document Type: Article

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