Interfacial contribution to magnetocapacitance in La0.05Tb 0.95MnO3/La0.67Sr0.33MnO 3/SrTiO3 heterojunctions

Journal of Physics D: Applied Physics

Volumn 42, Issue 5, 2009, Pages

  Zhang, Y T ^a,b   Wang, C C ^a,c   He, M ^a   Lu, H B ^a  

^a INSTITUTE OF PHYSICS   (China)

^b SHAANXI UNIVERSITY OF TECHNOLOGY   (China)

^c UNIVERSITY OF WOLLONGONG   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC ANOMALIES; LASER MOLECULAR-BEAM EPITAXIES; MAGNETO-RESISTIVE EFFECTS; MAGNETOCAPACITANCE; MAXWELL-WAGNER RELAXATIONS;

CRYSTAL GROWTH; DIELECTRIC PROPERTIES; ELECTRIC RESISTANCE; LANTHANUM; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; STRONTIUM ALLOYS; TERBIUM ALLOYS;

MANGANESE COMPOUNDS;

EID: 63749128695     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/5/055309     Document Type: Article

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