Dielectric properties of Bi doped SrTiO3 ceramics in the temperature range 500-800 K

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4874-4877

  Yu, Zhi ^a   Ang, Chen ^a,b   Vilarinho, P M ^a   Mantas, P Q ^a   Baptista, J L ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CERAMIC MATERIALS; DIELECTRIC RELAXATION; DOPING (ADDITIVES); LEAST SQUARES APPROXIMATIONS; MATHEMATICAL MODELS; OXIDES; OXYGEN; PERMITTIVITY;

DEBYE MODEL; DIELECTRIC MEASUREMENTS; DIELECTRIC POLARIZATION; SOLID STATE REACTION;

DIELECTRIC PROPERTIES;

EID: 0032073417     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367286     Document Type: Article

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