Selective patterned growth of single-crystal Ag-TCNQ nanowires for devices by vapor-solid chemical reaction

Advanced Functional Materials

Volumn 18, Issue 19, 2008, Pages 3043-3048

  Xiao, Kai ^a   Tao, Jing ^a   Puretzky, Alex A ^a   Ivanov, Ilia N ^a   Retterer, Scott T ^a   Pennycook, Stephen J ^a   Geohegan, David B ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; ELECTRIC WIRE; LOGIC DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NEWTONIAN FLOW; OPTICAL SWITCHES; POWDERS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR GROWTH; VAPORS;

AG-TCNQ; CHEMICAL REACTION PROCESSES; DETERMINISTIC GROWTHS; DIMETHANE; HIGH YIELDS; INORGANIC NANOWIRES; MEMORY SWITCHES; METAL FILMS; NANOSCALE MEMORIES; ON/OFF RATIOS; OPTICAL STORAGES; ORGANIC NANOWIRES; ORGANIC SEMICONDUCTORS; PATTERNED GROWTHS;

SILVER;

EID: 55349089616     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200800430     Document Type: Article

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