Semiconductor disk laser pumped Cr2+: Znse lasers

Optics Express

Volumn 17, Issue 20, 2009, Pages 18136-18141

  Hempler, Nils ^a   Hopkins, John Mark ^a   Rösener, Benno ^b   Rattunde, Marcel ^b   Wagner, Joachim ^b   Fedorov, Vladimir V ^c   Moskalev, Igor S ^c,d   Mirov, Sergey B ^c,d   Burns, David ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^d Photonics Innovations Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; NOISE FIGURE; PUMPING (LASER); SEMICONDUCTOR LASERS;

ABSORBED PUMP POWER; CENTRAL WAVELENGTH; OPTICAL ISOLATION; OPTICALLY PUMPED SEMICONDUCTOR DISK LASERS; OUTPUT INTENSITY; PUMP SOURCES; SEMICONDUCTOR DISK LASER; SLOPE EFFICIENCIES;

OPTICALLY PUMPED LASERS;

CHROMIUM; SELENIUM DERIVATIVE; ZINC DERIVATIVE; ZINC SELENIDE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; DIODE LASER; EQUIPMENT; EQUIPMENT DESIGN; REPRODUCIBILITY; SENSITIVITY AND SPECIFICITY;

CHROMIUM; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS, SEMICONDUCTOR; REPRODUCIBILITY OF RESULTS; SELENIUM COMPOUNDS; SENSITIVITY AND SPECIFICITY; ZINC COMPOUNDS;

EID: 70349690744     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.018136     Document Type: Article

References (22)

1. L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, "Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media," IEEE J. Quantum Eelectron. 32(6), 885-895 (1996).
2. U. Demirbas, and A. Sennaroglu, "Intracavity-pumped Cr2+: ZnSe laser with ultrabroad tuning range between 1880 and 3100 nm," Opt. Lett. 31(15), 2293-2295 (2006).
3. R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, "Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers," Adv. Solid-State Lasers 10, 208-210 (1997).
4. I. T. Sorokina, and E. Sorokin, "Chirped-Mirror Dispersion Controlled Femtosecond Cr:ZnSe Laser," Advanced Solid-State Photonics, 2007.
5. S. B. Mirov, V. V. Fedorov, I. S. Moskalev, D. V. Martyshkin and C. Kim, "Progress in Cr2+ and Fe2+ dopded Mid-IR Laser Materials," Laser Photonics Rev., DOI 10.1002/Ipor.200810076, 2009.
6. I. T. Sorokina, E. Sorokin, S. Mirov, V. Fedorov, V. Badikov, V. Panyutin, and K. I. Schaffers, "Broadly tunable compact continuous-wave Cr2+: ZnS laser," Opt. Lett. 27(12), 1040-1042 (2002). (Pubitemid 34699667)
7. M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, "1.9um and 2.0μm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe," Opt. Lett. 27(12), 1034-1036 (2002).
8. I. T. Sorokina, E. Sorokin, A. Di Lieto, M. Tonelli, R. H. Page, and K. I. Schaffers, "Efficient broadly tunable continuous-wave Cr2+: ZnSe laser," J. Opt. Soc. Am. B 18(7), 926-930 (2001).
9. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5W CW) diode-pumped vertical- external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photonic Tech. Lett. 9(8), 1063-1065 (1997).
10. N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, "High-brightness long-wavelength semiconductor disk lasers," Laser Photon. Rev. 2(3), 160-181 (2008).
11. S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov and M. D. Dawson, "Semiconductor disk lasers for the generation of visible and ultraviolet radiation," Laser Photonics Rev., DIO 10.1002, 2009.
12. G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, "Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers," J. Lightwave Technol. 26(8), 952-961 (2008).
13. J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, "High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm," Opt. Lett. 33(2), 201-203 (2008).
14. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77(5), 651-653 (2000).
15. J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32μm," Electron. Lett. 40(1), 30-31 (2004).
16. J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, "Recent advances in optically pμmped semiconductor lasers - art. no. 645109," Solid State Lasers XVI: Technol. Devices 6451, 45109-15109 (2007).
17. A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, "Thermal management in 2.3μm semiconductor disk lasers: A finite element analysis," IEEE J. Quantμm Eelectron. 44(2), 125-135 (2008).
18. L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Mi, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, "Power-scaling of optically-pμmped semiconductor lasers - art. no. 64510A," Solid State Lasers XVI: Technology and Devices 6451, 4510-1510 (2007).
19. N. Hempler, J. M. Hopkins, and M. Rattunde, "Tuning and brightness optimisation of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 μm," European Conference on Lasers and Electro-Optics, CB7.3, 2009.
20. D. Findlay, and R. A. Clay, "The measurement of internal losses in 4-level lasers," Phys. Lett. 20(3), 277 (1966).
21. J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, "Quantμm Electronic- Properties of the Na3Ga2Li3F12:Cr3+ Laser," IEEE J. Quantμm Eelectron. 24(6), 1077-1099 (1988).
22. P. Černý, G. J. Valentine, and D. Burns, "Actively stabilised diode pμmped Tm:YAIO laser," Electron. Lett. 40(17), 1061-1063 (2004).