Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media

IEEE Journal of Quantum Electronics

Volumn 32, Issue 6, 1996, Pages 885-895

  DeLoach, Laura D ^a,b,c   Page, Ralph H ^{a,d,e,f,g,h,i}   Wilke, Gary D ^a,c,j,k   Payne, Stephen A ^a,l,m,n,o   Krupke, William F ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^c Advanced Lasers and Components Group

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f Watkins Johnson Company   (United States)

^g Physics and Chemistry Departments

^h IBM ALMADEN RESEARCH CENTER   (United States)

ⁱ Advanced Lasers and Components Group

^j San Jose City College   (United States)

^k All Signal Tech Serv Corporation

^l BINGHAMTON UNIVERSITY   (United States)

^m PRINCETON UNIVERSITY   (United States)

ⁿ UNIVERSITY OF PENNSYLVANIA   (United States)

^o OPTICAL SOCIETY OF AMERICA   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; LIGHT ABSORPTION; LIGHT EMISSION; PUMPING (LASER); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; TRANSITION METALS;

LASER PUMPED LASER SYSTEM; RARE EARTH ION LASERS; SELENIDE IONS; ZINC CHALCOGENIDES;

SOLID STATE LASERS;

EID: 0030169856     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.502365     Document Type: Article

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