An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure

Nanotechnology

Volumn 20, Issue 44, 2009, Pages

  Sun, Edward ^a   Su, Fu Hsiang ^a   Shih, Ying Tsang ^a   Tsai, Hung Ling ^a   Chen, Ching Huang ^a   Wu, Mong Kai ^a   Yang, Jer Ren ^a   Chen, Miin Jang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; BAND GAPS; ELECTRON INJECTION LAYERS; EXTERNAL QUANTUM EFFICIENCY; HETEROSTRUCTURES; LIGHT EMISSION EFFICIENCY; LIGHT-EXTRACTION EFFICIENCY; MATRIX; ROOM TEMPERATURE; SI NANOCRYSTAL; SPATIAL CONFINEMENT; SURFACE PASSIVATION; TRANSPARENT CONDUCTIVE; ZNO;

ALUMINUM; CURRENT DENSITY; EXTRACTION; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT REFLECTION; METAL RECOVERY; NANOCRYSTALS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; VAPOR DEPOSITION; ZINC OXIDE;

QUANTUM EFFICIENCY;

NANOCRYSTAL; SILICON DIOXIDE; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; LIGHT EMITTING DIODE; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY;

EID: 70349671428     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/44/445202     Document Type: Article

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