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Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

The importance of electron temperature in silicon-based terahertz quantum cascade lasers

(5) Lever, L a Valavanis, A a Evans, C A a Ikonic Z a Kelsall, R W a

a UNIVERSITY OF LEEDS (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BOUND-TO-CONTINUUM; COHERENT TERAHERTZ RADIATION; COMPACT SOURCES; GE FRACTION; HIGH THERMAL CONDUCTIVITY; III-V COMPOUND SEMICONDUCTOR; INTERFACE ROUGHNESS SCATTERING; INTERSUBBAND TRANSITIONS; L-VALLEY; PROCESSING TECHNOLOGIES; RATE-EQUATION MODELS; SILICON-BASED; SILICON-BASED DEVICES; TERAHERTZ QUANTUM-CASCADE LASERS; WAVEGUIDE LOSS;

ELECTRIC FIELDS; GERMANIUM; QUANTUM CASCADE LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS;

ELECTRON TEMPERATURE;

EID: 70349664553 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3237177 Document Type: Article

Times cited : (13)

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