A method towards simulating the total luminous flux of a monochromatic high power LED operated in a pulsed manner

Optics Express

Volumn 17, Issue 20, 2009, Pages 17457-17470

  Moolmani, M C ^a,b   Koek, W D ^a   Urbach, H P ^b  

^a VSL Thijsseweg 11   (Netherlands)

^b Optics Research Group   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

PULSE WIDTH MODULATION; TEMPERATURE DISTRIBUTION; VOLTAGE CONTROL;

CURRENT-DRIVEN; HIGH POWER LED; HIGH POWER LIGHT EMITTING DIODES; LUMINOUS FLUX; PHYSICAL MEASUREMENT; TEMPERATURE DEPENDENCE; THERMAL BEHAVIOURS; TOTAL LUMINOUS FLUXES;

LIGHT EMITTING DIODES;

ARTICLE; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHTING; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY;

EID: 70349656957     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.017457     Document Type: Article

References (34)

1. R. V. Steele, "The story of a new light source, " Nature photonics 1, 25-26 (2007)
2. S. Pimputkar, J.S. Speck, S.P DenBaars, and S. Nakamura, "Prospects for LED lighting, " Nature photonics 3, 180-182 (2009)
3. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting, " J. Display Technol. 3, 160-175 (2007)
4. J. K. Kim and E. F Schubert, "Transcending the replacement paradigm of solid-state lighting, " Opt. Express 16, 21835-21842 (2008)
5. PManninen and P. Orrevetelainen, "On spectral and thermal behaviors of AlGalnP light-emitting diodes under pulse-width modulation, " Appl. Phys. Lett. 91, 181121 (2007)
6. Y. Gu, N. Narendran, T. Dong, and H. Wu, "Spectral and luminous efficacy change of high-power LEDs under different dimming methods, " in Sixth International Conference on Solid State Lighting Proc. SPIE Vol. 6337, (2006)
7. L. Yang., J. Hu, and M. Shin, "Dynamic Thermal Analysis of High-Power LEDs at Pulse Conditions, " Electron. Device Lett. 29, 863-866, (2008)
8. M. Shatalov, A. Chitnis, V. Mandavilh, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, 1. Yilmaz, M. S. Shur, and R. Gaska, "Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm, " Appl. Phys. Lett. 82, 167-169 (2003)
9. W. R. McCluney and R. McCluney, Introduction to Radiometry and Photometry (Artech House, 1994)
10. R. W. Boyd, Radiometry and the detection of optical radiation (Artech House, 1994)
11. CIE, The basis of physical photometry, 2nd ed. (publ. no. 18.2 1983)
12. CIE, International Lighting Vocabulary (publ. no. 17.4" 1987)
13. E. F. Schubert, Light-Emitting Diodes, Second Edition (Cambridge, 2006)
14. S. C. Bera, R. V. Singh, and V. K. Garg, "Temperature Behavior and Compensation of Light-Emitting Diode, " IEEE Photon. Technol. Lett. 17, 2286-2288 (2005)
15. S. Figge, T. Bottcher, D. Hommel, C. Zellweger, and M. llegems, "Heat generation and dissipation in GaN-based light emitting devices, " Phys. Status Solidi A, 200(1), 83-86 (2003)
16. J. Senawiratne, Y. Li, M. Zhu, Y. Xia, W. Zhao, T. Detchprohm, A. Chatterjee, J. L. Plawsky, and C. Wetzel, "Junction Temperature Measurements and Thermal Modehng of GaInN/GaN Quantum Well Light-Emitting Diodes, " J. Electron. Mater. 37, 607-610 (2008)
17. Y. Xi, J.-Q. Xi, Th. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, A. J. Fischer, M. H. Crawford, K. H. A. Bogart, and A. A. Allerman "Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods, " Appl. Phys. Lett. 86, 031907 (2005)
18. Y. Xi and E. F. Schubert, "Junction temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method, " Appl. Phys. Lett. 85, 2163-2165 (2004)
19. H. Ryu, K. Ha, J. Chae, O. N. Nam, and Y. Park, "Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics, " Appl. Phys. Lett. 87, 093506 (2005)
20. H. Ra, K. S. Song, C. Ok and Y. Hahn, "Heat transfer behavior of high-power light-emitting diode packages, " Korean J. Chem. Engin. 24, 197-203 (2007)
21. N. Chen, C. Lin, Y. Yang, C. Shen, T. Wang, and M. Wu, "Measurement of Junction Temperature in a Nitride Light-Emitting Diode, " Jpn. J. Appl. Phys. 47 8779-8782 (2008)
22. A. Keppens, W. R. Ryckaert, G. Deconick, and P. Hanselaer, "High power light-emitting diode junction temperature determination from current-voltage characteristics, " J. Appl. Phys. 104, 093104.1-093104.8 (2008)
23. Y. Ohno, "Color Rendering and Luminous Efficacy of White LED Spectra" in Fourth International Conference on Solid State Lighting, Proc. SPIE Vol. 5530, (2004)
24. M. Kim, M. F. Schubert, Q. Dai, J. Kyu Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efciency droop in GaN-based light-emitting diodes, " Appl. Phys. Lett. 91, 183507-183509 (2007)
25. L. Jayasinghe and Y. Gu, and N. Nadarajah, "Characterization of thermal resistance coefficient of high-power LEDs, " in Sixth International Conference on Solid State Lighting, Proc. SPIE Vol. 6337, (2006)
26. W. Nakwaski and A. M. Kontkiewicz, "Temperature distribution in a light-emitting diode during a pulse operation, " Electron. Lett. 20, 984-985 (1984)
27. G. K. Wachutka, "Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modehng, " IEEE Trans. Comp. Aided Design 9, 1141-1149 (1990)
28. B-J. Huang and C-W. Tang, and M-S. Wu, "System dynamics model of high-power LED luminaire, " Appl. Therm. Eng. 29, 609-616 (2008)
29. H. Ishii, K. Sugiyama, D. Yoshimura, E. Ito, Y. Ouchi, and K. Seki, "Energy-Level Alignment at Model Interfaces of Organic Electroluminescent Devices Studied by UV Photoemission: Trend in the Deviation from the Traditional Way of Estimating the Interfacial Electronic Structures, " IEEE J. Sel. Top. Quantum Electron. 4(1), 24-33 (1998)
30. Y. Yi, S. J. Kang, K. Cho, J. M. Koo, K. Han, K. Park, M. Noh, C. N. Whang, and K. Jeong, "Origin of the improved luminance-voltage characteristics and stability in organic light-emitting device using CsCl electron injection layer, " Appl. Phys. Lett. 86(21), 213502 (2005)
31. M. Matsumura, T. Akai, M. Saito, and T. Kimura, "Height of the energy barrier existing between cathodes and hydroxyquinoline-aluminum complex of organic electroluminescence devices, " J. Appl. Phys. 79(1), 264-268 (1996)
32. W. Brütting, S. Berleb, and A. G. M̈ckl, "Device physics of organic light-emitting diodes based on molecular materials, " Org. Electron. 2(1), 1-36 (2001)
33. W. Gao, and A. Kahn, "Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyanoquinodimethane: Interface versus bulk effects, " Org. Electron. 3(2), 53-63 (2002)
34. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981